NTE2662 silicon npn transistor high frequency, low noise rf description: the NTE2662 is a silicon npn type transistor in a miniature surface mount package designed for os- cillator applications up to 3ghz. this device features low voltage operation, low phase noise, and high immunity to pushing effects. features: new miniature surface mount package ? small transistor footprint ? 1.0mm x 0.5mm x 0.5mm ? low profile / 0.50mm package height ? flat lead style for better rf performance ideal for 3ghz oscillators low phase noise low pushing factor absolute maximum ratings: (t a = +25 c, note 1 unless otherwise specified) collector ? to ? base voltage, v cbo 9v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector ? to ? emitter voltage, v ceo 5.5v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . emitter ? to ? base voltage, v ebo 1.5v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector current, i c 100ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total power dissipation (note 2), p t 140mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature, t j +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ? 65 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . note 1. operation in excess of any one of these parameters may result in permanent damage. note 2. with device mounted on 1.8cm 2 x 1.0mm glass epoxy board. electrical characteristics: (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit gain bandwidth f t v ce = 1v, f = 2ghz i c = 5ma 3.0 4.5 ? ghz i c = 15ma 5.0 6.5 ? ghz insertion power gain |s 21e | v ce = 1v, f = 2ghz, note 3 i c = 5ma 3.0 4.0 ? db note 3 i c = 15ma 4.5 5.5 ? db note 3. pulsed measurement, pulse width 350 s, duty cycle 2%.
electrical characteristics (cont?d): (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit noise figure nf v ce = 1v, i c = 10ma, f = 2ghz ? 1.9 2.5 db reverse transfer capacitance c re v cb = 0.5v, i e = 0ma, f = mhz, note 4 ? 0.6 0.8 pf collector cutoff current i cbo v cb = 5v, i e = 0 ? ? 600 na emitter cutoff current i ebo v eb = 1, i c = 0 ? ? 600 na dc current gain h fe v ce = 1v, i c = 5ma, note 3 100 120 145 note 3. pulsed measurement, pulse width 350 s, duty cycle 2%. note 4. collector ? to ? base capacitance when the emitter is grounded. .027 (0.70) .008 (0.20) .006 (0.15) b c e (bottom view) .008 (0.20) .008 (0.20) .012 (0.30) .027 (0.70) .020 (0.50) .014 (0.35) .039 (1.0) .006 (0.15) .004 (0.10) .004 (0.10) .020 (0.50) .005 (0.125) .014 (0.35)
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